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2SJ165

Part No 2SJ165
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description P-CHANNEL MOS FET FOR SWITCHING / Trans MOSFET P-CH 50V 0.1A 3-Pin
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 158420-2SJ165
Popularity Medium
Supply and Demand Status Balance
Family Name 2SJ165
Introduction Date March 02, 1998
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SJ165 CAD Model

Description

The 2SJ165 is a P-channel MOSFET characterized by its remarkable efficiency and versatility in various electronic applications. It is a favorite among engineers for its low power consumption and robust performance metrics, making it ideal for modern electronic systems requiring dependable power management solutions.

Features and Benefits

  • Outstanding Efficiency: Provides high efficiency in power control operations, reducing overall system cost and heat production.
  • Low Drain-source Resistance: Minimizes energy loss, ensuring long-term system reliability.
  • Advanced Thermal Management: Maintains performance consistency across wide temperature variations.
  • Comprehensive Design Flexibility: Compact structure that caters to versatile design needs.

Applications and Projects

  • Switchmode Power Supplies: Utilized where efficient power switching is critical.
  • Smart Home Devices: Integral for enhancing power efficiency in IoT applications.
  • Automated Systems: Vital in automation setups demanding controlled power usage.
  • RF Applications: Enhances performance in RF power control applications.

Additional Details

The 2SJ165 offers a balance of performance, efficiency, and design convenience, positioning itself as a key enabler for innovative electronic designs. It features a low gate capacitance for efficient drive and rapid switching, making it suitable for high-frequency applications. Constructed with robust materials, it resists wear and tear, ensuring longevity and reliability in diverse conditions. This MOSFET supports sustainable development efforts by optimizing energy use in cutting-edge electronic designs.

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