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2SC4181A-T1-A-L16

Part No 2SC4181A-T1-A-L16
Manufacturer Renesas Electronics America
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 960462-2SC4181A-T1-A-L16
Categories OEM Parts(0-9)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC4181A-T1-A-L16 CAD Model

Description

The 2SC4181A-T1-A-L16 is an NPN epitaxial planar silicon transistor manufactured by Renesas Electronics America. This transistor is primarily designed for high-frequency amplification applications. It is commonly used in oscillator circuits, RF amplifiers, and high-speed switching circuits.

Applications

  • RF amplifiers
  • Oscillator circuits
  • High-speed switching circuits
  • Mixer circuits
  • Communication equipment

Features

  • High transition frequency (fT)
  • Low noise figure
  • High power gain
  • Small package size
  • Epitaxial planar structure for reliability

Benefits

  • Efficient amplification at high frequencies
  • Minimal signal distortion
  • Stable operation
  • Compact design

Additional Details

The 2SC4181A-T1-A-L16 has a specified collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PC) rating. The transition frequency (fT) indicates its high-frequency performance. The noise figure (NF) defines its low-noise characteristics. The transistor's datasheet provides detailed information on these parameters as well as other critical characteristics like collector-base capacitance (Cob). The package type contributes to its suitability for surface mount assembly.

The 2SC4181A-T1-A-L16 is a high-performance NPN transistor suitable for various high-frequency applications. Its design and electrical characteristics facilitate efficient and stable circuit performance. It is imperative that the official datasheet is consulted before using the 2SC4181A-T1-A-L16 to ensure that all operating conditions are within the manufacturer's recommended limits. Exceeding these limits can lead to device failure and circuit malfunction. Understanding parameters like maximum voltage, current, and power dissipation is critical for preventing damage. Proper biasing and impedance matching are essential for achieving optimal performance in high-frequency circuits. This transistor is an effective solution for demanding RF and high-speed signal processing tasks.

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