The 2SC2223-T2B-A is a silicon NPN epitaxial planar transistor manufactured by Renesas Electronics. It is designed for high-frequency amplification and switching applications, offering low noise and high gain characteristics.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• Low-noise amplifiers (LNAs)
• VHF/UHF applications
• Switching circuits

Features

• NPN Epitaxial Planar Transistor
• High Transition Frequency (fT): Suitable for high-frequency applications.
• Low Noise Figure: Minimizes noise in sensitive receiver circuits.
• High Gain: Provides significant signal amplification.
• Small Signal Amplifier
• Surface Mount Package: T2B package for easy PCB assembly.

Benefits

• Improved Signal Quality: Low noise figure enhances signal clarity in receiver applications.
• Increased Amplifier Gain: High gain allows for greater signal amplification.
• Efficient High-Frequency Performance: High transition frequency enables efficient operation at high frequencies.
• Compact Design: Small surface mount package saves board space.
• Reliable Performance: Renesas transistors are known for their reliability and long-term stability.

Technical Specifications

• Transistor Type: NPN
• Material: Silicon (Si)
• Package: T2B (SOT-346)
• Collector-Emitter Voltage (VCEO): 25 V
• Collector-Base Voltage (VCBO): 30 V
• Emitter-Base Voltage (VEBO): 3 V
• Collector Current (IC): 80 mA
• Collector Dissipation (PC): 200 mW
• Transition Frequency (fT): 1.0 GHz (typical)
• Noise Figure (NF): 2 dB (typical)
• DC Current Gain (hFE): 80-240
• Operating Temperature: -55 to +150 °C

Note: Always refer to the official Renesas Electronics datasheet for the 2SC2223-T2B-A for complete and precise specifications, including detailed performance characteristics and application notes. The datasheet will provide crucial information about gain, noise figure, and frequency response under different operating conditions.