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2SA1413-AZ-K

Part No 2SA1413-AZ-K
Manufacturer Renesas Electronics America
Catalog OEM Parts (0 - 9)
Sample
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RoHS Non-Compliant
Win Source Part Number 1036574-2SA1413-AZ-K
Categories OEM Parts(0-9)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1413-AZ-K CAD Model

Description

The 2SA1413-AZ-K is a PNP Epitaxial Silicon Transistor manufactured by Renesas Electronics. It's designed for audio frequency power amplification and high-speed switching applications. The transistor offers a good balance of voltage, current, and power dissipation capabilities, making it suitable for a variety of general-purpose and audio-related circuits.

Applications:

  • Audio power amplifiers
  • Switching circuits
  • DC-DC converters
  • Motor drivers
  • General-purpose amplification
  • Line drivers
  • Load switches
  • Output stages
  • Voltage regulators

Features:

  • High collector current (IC)
  • Low saturation voltage (VCE(sat))
  • High power dissipation (PC)
  • Good hFE linearity
  • Complementary to NPN transistor 2SC3602
  • TO-126 package

Benefits:

  • High output power capability
  • Efficient switching performance
  • Suitable for demanding applications
  • Low distortion in audio applications
  • Simplified circuit design with complementary NPN transistor
  • Easy to mount and heatsink

Additional Details:

The 2SA1413-AZ-K has a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V. The collector current (IC) is -1A. The power dissipation (PC) is 1.2W. The current gain (hFE) is typically in the range of 100-320 (for the AZ rank). The saturation voltage (VCE(sat)) is low, minimizing power losses during switching. The transition frequency (fT) is relatively high, enabling high-speed switching performance. The TO-126 package provides good thermal characteristics. This transistor is often used in audio amplifier output stages, DC-DC converters, and other general-purpose amplification and switching applications. The operating junction temperature range is typically -55°C to +150°C. Being complementary to the 2SC3602 NPN transistor, it allows for symmetrical push-pull amplifier designs.

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