The FM3116-S is a 16-kilobit (2K x 8) nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM, Flash and other nonvolatile memories.

Applications

• Data Logging
• Metering
• Automotive
• Industrial Control
• Medical Devices

Features

• 16-kilobit Ferroelectric Random Access Memory (F-RAM)
• Organized as 2,048 x 8
• High-Endurance 100 Trillion (10¹⁴) Read/Write Cycles
• Data Retention: 151 years
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Technology
• Serial Peripheral Interface (SPI)
• Supports SPI Modes 0 (0,0) and 3 (1,1)
• Up to 40 MHz Bus Frequency
• Hardware Write Protection
• Low Power Consumption
• 3.3V Operating Voltage
• Industrial Temperature -40°C to +85°C
• RoHS Compliant

Benefits

• High Endurance: Offers virtually unlimited read/write cycles, extending the product lifespan in write-intensive applications.
• Fast Write Speed: NoDelay writes enable immediate data logging without the delays associated with EEPROM or Flash memory.
• Low Power Consumption: Consumes minimal power, making it suitable for battery-powered or energy-sensitive applications.
• Reliable Data Retention: Provides long-term data retention, ensuring data integrity even without power.
• SPI Interface: Utilizes a simple SPI interface for easy integration with microcontrollers.

Additional Details

The FM3116-S memory device from Ramtron operates at 3.3V and supports SPI modes 0 and 3. It includes hardware write protection to prevent accidental data modification. Its extended industrial temperature range enables reliable operation in harsh environments. This F-RAM solution provides a robust and efficient alternative to other non-volatile memory types, particularly where frequent writes and long-term data retention are critical.