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Same model may have multiple batches, images only for reference.
UF3SC120009K4S Qorvo
Same model may have multiple batches, images only for reference.

UF3SC120009K4S

Part No UF3SC120009K4S
Manufacturer Qorvo US Inc.
Catalog FETs - Single
Description SICFET N-CH 1200V 120A TO247-4
Datasheet
UF3SC120009K4S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202025-UF3SC120009K4S
Manufacturer Qorvo
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 789W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian UF3SC120009K4S CAD Model

Description

The Qorvo SiCFET is a single N-Channel FET (MOSFET) designed for high-power applications.

  • Package: tube
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain-to-Source Voltage (Vdss): 1200V
  • Power Dissipation: 789W when the case temperature (Tc) is maintained within the specified limits
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Product Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $56.3063 $112.6126
3+ $46.2000 $138.6000
4+ $44.7563 $179.0252
6+ $43.3125 $259.8750
7+ $41.8688 $293.0816
10+ $37.5375 $375.3750
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Availability: 30 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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