The MMBTA06-AU_R1_000A1 is a bipolar NPN transistor designed for use in discrete semiconductor products. It is characterized by a maximum power of 225mW, a voltage breakdown of 80V, and a maximum collector current of 500mA.
- Maximum Power: 225mW
- Voltage Breakdown: 80V
- Maximum Collector Current: 500mA
- Transistor Type: NPN
- Vce Saturation: 250mV @ 10mA and 100mA
- Maximum Collector Cutoff: 100nA
- DC Current Gain (hFE): 100 @ 100mA and 1V
- Frequency Transition: 100MHz
- Package/Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Temperature Range: -55°C to 150°C (TJ)
- Alternative Part: cross-reference to other similar products
- MSL Level: 1 (unlimited)
- HTSUS Code: 8541.21.0075
- Manufacturer: Panjit International Inc.