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Same model may have multiple batches, images only for reference.
2SB1429_R1_00001 Panjit
Same model may have multiple batches, images only for reference.

2SB1429_R1_00001

Part No 2SB1429_R1_00001
Manufacturer Panjit
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 3A SOT23 / Bipolar (BJT) Transistor PNP 20 V 3 A 160MHz 1.25 W Surface Mount SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Panjit International Inc.
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Power - Max 1.25 W
Frequency - Transition 160MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-2SB1429_R1_00001TR,3757-2SB1429_R1_00001CT,3757-2SB1429_R1_00001DKR
Standard Package 3,000
Win Source Part Number 969628-2SB1429_R1_00001
Ultra Librarian 3D Model Ultra Librarian 2SB1429_R1_00001 CAD Model

Description

The 2SB1429_R1_00001 is a PNP bipolar (BJT) transistor designed for single use by Panjit International Inc.

  • Maximum Power: 1.25 W
  • Collector-Emitter Breakdown Voltage: 20 V
  • Maximum Collector Current: 3 A
  • Vce Saturation: 300mV @ 300mA, 3A
  • DC Current Gain: 200 @ 500mA, 2V
  • Frequency Transition: 160MHz
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Temperature Range: -55°C to 150°C

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