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UNR521LG0L

Part No UNR521LG0L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 150MW SMINI3 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 150 mW Surface Mount SMini3-F2
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 150 MHz
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SC-85
Supplier Device Package SMini3-F2
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names UNR521LG0LDKR,UNR521LG0LCT,UNR521LG0LTR
Standard Package 3,000
Win Source Part Number 1144025-UNR521LG0L
Ultra Librarian 3D Model Ultra Librarian UNR521LG0L CAD Model

Description

The UNR521LG0L is a pre-biased NPN transistor from Panasonic Electronic Components.

  • Win Source Part Number: 1144025
  • Package: Tape and Reel
  • Standard Package: 3,000
  • Maximum Power: 150 mW
  • Voltage Collector Emitter Breakdown (Max): 50 V
  • Current Collector (Ic) (Max): 100 mA
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
  • Frequency Transition: 150 MHz
  • Package/Case: SC-85
  • Supplier Device Package: SMini3-F2
  • MSL Level: 1 (Unlimited)
  • Resistor-Base (R1): 4.7 kOhms
  • Resistor-Emitter Base (R2): 4.7 kOhms
  • HTSUS: 8541.21.0075
  • Status: Obsolete

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