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2SC761

Part No 2SC761
Manufacturer Panasonic
Catalog Custom Parts (0 - A)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1150287-2SC761
Categories Custom Parts
Manufacturer Panasonic
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC761 CAD Model

Description

The 2SC761 is a silicon NPN epitaxial planar transistor manufactured by Panasonic. It's designed for low-noise amplifier applications and general-purpose switching.

Applications:

  • Low-noise amplifiers (LNAs): Used in radio frequency (RF) circuits to amplify weak signals with minimal added noise.
  • General-purpose switching: Employed as a switch in various electronic circuits for controlling current flow.
  • Oscillator circuits: Can be used in oscillator circuits to generate signals at specific frequencies.
  • Mixer circuits: Suitable for use in mixer circuits to combine or convert signals.

Features:

  • Low noise figure: Designed to minimize added noise in amplifier circuits, making it suitable for sensitive applications.
  • High current gain (hFE): Provides significant current amplification, allowing for efficient signal amplification.
  • High transition frequency (fT): Enables operation at high frequencies, making it suitable for RF applications.
  • Small signal amplification: Optimized for amplifying small signals with minimal distortion.
  • Epitaxial planar structure: Provides improved performance and reliability.

Benefits:

  • Improved signal reception: Enables the amplification of weak signals with minimal added noise.
  • Efficient switching: Provides fast and reliable switching performance.
  • Versatile application: Suitable for a wide range of applications, including amplification and switching.
  • Compact size: Available in a small package for space-constrained applications.
  • Reliable performance: Offers stable and reliable operation over a wide range of conditions.

Additional Details:

The 2SC761 has specific electrical characteristics, including collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PD). These parameters should be considered when selecting the transistor for a specific application. It is typically available in a through-hole package.

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