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RB751V40T1G

Part No RB751V40T1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description Rectifier Diode Schottky 40V 0.03A 2-Pin SOD-323 T/R / DIODE SCHOTTKY 30V 30MA SOD323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 30mA (DC)
Voltage - Forward (Vf) (Max) @ If 370mV @ 1mA
Current - Reverse Leakage @ Vr 500nA @ 30V
Capacitance @ Vr, F 2.5pF @ 1V, 1MHz
Mounting SMD (SMT)
Case / Package SOD-323
Operating Temperature - Junction -55°C to 150°C
Win Source Part Number 027178-RB751V40T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Portable Devices
Family Name RB751V40
Introduction Date May 02, 2001
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian RB751V40T1G CAD Model

Description

ON Semiconductor RB751V40T1G Schottky Barrier Diode

The RB751V40T1G is a high-performance Schottky barrier diode designed and manufactured by the renowned ON Semiconductor. This diode is specifically engineered to offer low forward voltage drop and fast switching capabilities, making it an ideal choice for high-efficiency power management applications.

With a minimal package profile, the RB751V40T1G is housed in the compact SOD-523 package, which is well-suited for space-constrained applications. This diode features a continuous forward current of 30 mA and a maximum repetitive peak reverse voltage of 40 V, which ensures reliable operation in a variety of circuits.

The RB751V40T1G boasts impressive thermal performance due to its low power loss characteristics. This is largely attributed to its Schottky barrier design, which reduces the forward voltage drop to typically 0.37 V at 1 mA, thereby enhancing overall energy efficiency. The low forward voltage drop combined with fast switching speeds minimizes losses and helps in reducing heat generation within circuits, leading to improved longevity and reliability of the end application.

This diode is also characterized by its low reverse leakage current, which is a critical parameter for power-sensitive designs. With a maximum reverse leakage current of 0.2 µA at 40 V, the RB751V40T1G ensures minimal power waste and contributes to the extended battery life of portable devices.

The RB751V40T1G is designed to meet the stringent requirements of various applications, including but not limited to, reverse voltage protection, voltage clamping, line rectification, and high-frequency inverters. Its robust construction allows it to perform reliably in harsh environments, making it suitable for automotive, industrial, and consumer electronics where performance and durability are paramount.

ON Semiconductor's commitment to quality is reflected in the RB751V40T1G's compliance with the RoHS directive, ensuring that it is free from hazardous substances. This diode is an excellent choice for designers looking for a high-efficiency, compact, and environmentally friendly component for their next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,925+ $0.0260 $50.0500
4,120+ $0.0243 $100.1160
6,385+ $0.0235 $150.0475
9,135+ $0.0219 $200.0565
11,850+ $0.0211 $250.0350
14,855+ $0.0202 $300.0710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 1925 pcs
Order Increment : 1 pcs
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