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NV24C512MUW3VTBG

Part No NV24C512MUW3VTBG
Manufacturer ON Semiconductor
Catalog Memory
Description IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr ON Semiconductor
Series Automotive, AEC-Q100
Package Tape & Reel
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 512Kbit
Memory Organization 64K x 8
Memory Interface I2C
Clock Frequency 1 MHz
Write Cycle Time - Word, Page 5ms
Access Time 400 ns
Voltage - Supply 2.5V ~ 5.5V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-UFDFN Exposed Pad
Supplier Device Package 8-UDFN (2x3)
Base Product Number NV24C512
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051
Win Source Part Number 854724-NV24C512MUW3VTBG
Ultra Librarian 3D Model Ultra Librarian NV24C512MUW3VTBG CAD Model

Description

The NV24C512MUW3VTBG is a state-of-the-art non-volatile memory device from ON Semiconductor, designed to meet the robust data storage needs of modern electronic systems. This EEPROM (Electrically Erasable Programmable Read-Only Memory) device offers a substantial 512-Kbit storage capacity, allowing it to serve a wide range of applications that require data retention even when the power is turned off.

Key Features

  • Capacity: The device boasts a high-density storage capacity of 512 Kbits, providing ample space for firmware storage, configuration parameters, or any data that requires persistent memory.
  • Interface: It features an I²C (Inter-Integrated Circuit) serial interface, which facilitates easy and efficient integration into most microcontroller-based systems, with minimal pin count and a streamlined communication protocol.
  • Speed: The memory operates at a standard I²C clock frequency, allowing for quick data access and transfer, which is essential for applications that require rapid data retrieval and storage.
  • Voltage Range: The NV24C512MUW3VTBG is designed to operate across a wide voltage range, enhancing its compatibility with various system power supplies and ensuring reliable performance under varying conditions.
  • Endurance: It offers exceptional write endurance, capable of withstanding a significant number of write cycles, which ensures the longevity and reliability of the memory device over the product's lifespan.
  • Data Retention: With its non-volatile technology, the device guarantees data retention for extended periods without power, making it an ideal choice for applications that require data preservation during power loss.

Applications

The versatility of the NV24C512MUW3VTBG makes it suitable for a broad range of applications, including but not limited to:

  • Industrial and automation control systems
  • Consumer electronics
  • Medical devices
  • Automotive systems
  • Smart metering
  • Internet of Things (IoT) devices

In conclusion, the NV24C512MUW3VTBG from ON Semiconductor represents a reliable and efficient solution for systems requiring non-volatile memory. Its robust feature set ensures that it can meet the demands of a variety of applications, making it a valuable component in any electronic design.

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