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NTSB20120CT-1G

Part No NTSB20120CT-1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 120V I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 120 V
Current - Average Rectified (Io) (per Diode) 10A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 700 µA @ 120 V
Operating Temperature - Junction -40°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Base Product Number NTSB20120
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 649948-NTSB20120CT-1G
Ultra Librarian 3D Model Ultra Librarian NTSB20120CT-1G CAD Model

Description

ON Semiconductor NTSB20120CT-1G Dual Schottky Diode

The NTSB20120CT-1G is a high-performance dual Schottky diode designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This component is engineered to provide efficient power management solutions for a wide range of applications, including power supplies, converters, and high-frequency circuits.

This robust diode features a common cathode configuration, which makes it ideal for use in applications requiring a dual diode with shared cathode connection. The NTSB20120CT-1G is housed in a compact TO-220 package, which offers excellent power handling capability while maintaining a small footprint on the PCB.

Key specifications of the NTSB20120CT-1G include a maximum repetitive reverse voltage (VRRM) of 120 volts and a maximum average forward rectified current (IF(AV)) of 20 amperes at TA = 135°C. This high current rating, combined with a low forward voltage drop, ensures high efficiency in power conversion applications. The dual diode also boasts a maximum operating junction temperature of 150°C, which allows for operation in high-temperature environments without compromising performance or reliability.

The NTSB20120CT-1G provides superior switching performance with its fast reverse recovery time, making it suitable for high-frequency applications. Additionally, its low power loss and high surge capability are critical for improving system reliability and extending the life of the end product.

ON Semiconductor's commitment to environmental sustainability is reflected in the NTSB20120CT-1G, as it is a Pb-free (Lead-free) and RoHS compliant product. This ensures that the diode meets the environmental standards of today's electronic market and supports the design of eco-friendly devices.

In summary, the NTSB20120CT-1G from ON Semiconductor is a versatile and efficient solution for designers looking to enhance power efficiency and reliability in their applications. Its robust design, combined with superior electrical characteristics, makes it a top choice for a range of power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6070 $60.7000
235+ $0.4980 $117.0300
360+ $0.4826 $173.7360
495+ $0.4670 $231.1650
640+ $0.4514 $288.8960
860+ $0.4047 $348.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,800 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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