The ON Semiconductor NTHD4P01FT1-D is a high-performance P-Channel Power MOSFET designed to deliver efficient power management and conversion. This device is ideal for a wide range of applications, including power supply, motor control, and battery management systems. With its compact footprint and low on-resistance, the NTHD4P01FT1-D is a perfect choice for space-constrained and power-sensitive designs.
Key Features
- Low On-Resistance: The MOSFET features a low on-resistance of typically 20 mΩ at VGS = -4.5 V, which enhances its efficiency by minimizing power losses during operation.
- High Power Dissipation: With a power dissipation of 2.5 W, this device can handle significant power, making it suitable for demanding applications.
- Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTHD4P01FT1-D provides superior performance and reliability.
- Low Threshold Voltage: The device has a low threshold voltage, which allows for operation at lower gate voltages and improves the overall power efficiency.
- Compact Size: The MOSFET comes in a small SOT-416 (SC-75) surface-mount package, which saves valuable board space without compromising on power handling capability.
Applications
The NTHD4P01FT1-D is versatile and can be used in various applications, such as:
- Load Switches
- DC/DC Converters
- Battery Management Systems
- Power Management in Portable Devices
- Motor Control Circuits
Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDSS) |
-20 V |
| Gate-to-Source Voltage (VGSS) |
±8 V |
| Continuous Drain Current (ID) |
-3.7 A |
| Power Dissipation (PD) |
2.5 W |
| Operating Temperature Range (TJ) |
-55°C to 150°C |
With its robust design and impressive electrical characteristics, the ON Semiconductor NTHD4P01FT1-D P-Channel Power MOSFET is an excellent choice for designers looking to improve power efficiency and performance in their electronic systems.