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NSD914XV2T5G

Part No NSD914XV2T5G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GP 100V 200MA DO214AA / Diode 100 V 200mA Surface Mount DO-214AA (SMB)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1 MHz
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package DO-214AA (SMB)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number NSD914
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1356406-NSD914XV2T5G
Ultra Librarian 3D Model Ultra Librarian NSD914XV2T5G CAD Model

Description

The NSD914XV2T5G is a high-performance, precision bipolar transistor from ON Semiconductor, a leading provider in the semiconductor industry. This device is designed to meet a wide range of requirements for current amplification and switching applications, making it an ideal choice for designers looking to improve the efficiency and reliability of their electronic circuits.

Key Features

  • Transistor Polarity: NPN - This allows the transistor to control the flow of electrons from the emitter to collector, facilitating the amplification of signals.
  • Collector-Emitter Voltage (VCEO): 50V - The maximum voltage the transistor can tolerate between its collector and emitter without breakdown, which is suitable for many electronic applications.
  • Collector Current (IC): 100mA - This current rating indicates the maximum continuous current the transistor can handle through its collector.
  • DC Current Gain (hFE): 200 to 600 - A measure of the transistor's ability to amplify a signal, with a higher hFE value representing a greater amplification factor.
  • Power Dissipation: 225mW - The maximum amount of power the transistor can dissipate without exceeding its maximum operating temperature, ensuring stability and longevity.
  • Operating Temperature Range: -55°C to +150°C - A broad temperature range that allows the transistor to function in various environmental conditions.
  • Package / Case: SOT-523 - A compact, surface-mount package that saves space on printed circuit boards (PCBs).

Applications

The NSD914XV2T5G is versatile and can be used in a variety of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Switching circuits in consumer electronics
  • Driver stages in amplifiers
  • Control systems in industrial machinery
  • Telecommunication devices
  • Portable and battery-powered devices

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet stringent industry standards. The NSD914XV2T5G is manufactured with precision and undergoes rigorous testing to ensure its performance and reliability in a wide range of applications. Customers can trust ON Semiconductor for components that deliver consistent results and support the long-term success of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
995+ $0.0581 $57.8095
2,425+ $0.0477 $115.6725
3,750+ $0.0462 $173.2500
5,170+ $0.0447 $231.0990
6,670+ $0.0434 $289.4780
8,930+ $0.0388 $346.4840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,390 pieces
MOQ: 995 pcs
Order Increment : 1 pcs
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