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NRVUS360VBT3G

Part No NRVUS360VBT3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 3A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 3 µA @ 600 V
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package SMB
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number NRVUS360
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 649496-NRVUS360VBT3G
Ultra Librarian 3D Model Ultra Librarian NRVUS360VBT3G CAD Model

Description

The NRVUS360VBT3G is a high-performance Schottky barrier rectifier designed by ON Semiconductor, a leading figure in energy-efficient innovations. This advanced power management component is specifically tailored for applications requiring low forward voltage drop and high surge current capability. With its robust design, the NRVUS360VBT3G is an ideal choice for a wide range of electronic devices, particularly in the automotive, industrial, and high-frequency domains.

Key Features

  • Low Forward Voltage Drop: The device ensures efficient power usage by offering a low forward voltage drop, which helps to reduce thermal stress and improve system efficiency.
  • High Surge Current Capability: With its ability to handle high surge currents, the NRVUS360VBT3G is well-suited for applications that may experience unexpected overcurrent conditions.
  • High Temperature Operation: Engineered to operate reliably at high temperatures, this component is suitable for harsh environments where thermal resilience is a necessity.
  • Guard Ring Die Construction: The inclusion of a guard ring die construction provides enhanced reliability through transient protection, making it a durable choice for sensitive circuits.

Applications

The versatility of the NRVUS360VBT3G allows it to be used in various applications, including:

  • Automotive systems where reliability under high temperature and transient conditions is crucial.
  • Power supply designs that benefit from the efficiency provided by low forward voltage rectifiers.
  • Industrial equipment that demands robust components capable of withstanding surges and spikes.
  • High-frequency inverters and DC-DC converters where fast switching and low losses are important.

Product Specifications

The NRVUS360VBT3G boasts impressive specifications that make it a top contender in its class:

  • Package: SMB (Surface Mount)
  • Peak Repetitive Reverse Voltage: 60V
  • Average Rectified Forward Current: 3A
  • Operating Junction Temperature Range: -55°C to +150°C
  • RoHS Compliant

With its combination of efficiency, reliability, and performance, the NRVUS360VBT3G from ON Semiconductor is an excellent choice for designers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7615 $53.3050
165+ $0.6249 $103.1085
250+ $0.6053 $151.3250
345+ $0.5858 $202.1010
445+ $0.5663 $252.0035
595+ $0.5077 $302.0815
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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