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NRVTSA4100T3G

Part No NRVTSA4100T3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 100V 4A SMA  /  Diode Schottky 100 V 4A Surface Mount SMA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 660 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 25 µA @ 100 V
Capacitance @ Vr, F 54.7pF @ 100V, 1MHz
Mounting SMD (SMT)
Package / Case DO-214AC, SMA
Supplier Device Package SMA
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number NRVTSA4100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names NRVTSA4100T3GOSTR,2156-NRVTSA4100T3G-OS,ONSNRVTSA4100T3G,NRVTSA4100T3G-ND,NRVTSA4100T3GOSDKR,NRVTSA4100T3GOSCT
Standard Package 5,000
Win Source Part Number 1082708-NRVTSA4100T3G
Ultra Librarian 3D Model Ultra Librarian NRVTSA4100T3G CAD Model

Description

ON Semiconductor NRVTSA4100T3G Overview

The ON Semiconductor NRVTSA4100T3G is a high-performance, versatile P-Channel Trench MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the evolving needs of modern electronic systems.

Key Features

  • Low R<sub>DS(on): The NRVTSA4100T3G boasts a low on-state resistance, ensuring minimal power loss and improved efficiency during operation.
  • High Current Capability: With a continuous drain current of up to -4.1 A, this MOSFET can handle significant power for its size, making it suitable for high-density power applications.
  • Power Dissipation: It has a power dissipation of 1.25 W, which allows it to sustain moderate levels of power without overheating, contributing to system reliability.
  • Thermal Management: The device comes in a compact SOT-23 package, which is designed for optimal thermal performance, ensuring stability even under high load conditions.
  • Gate Charge: The MOSFET features a low total gate charge (Qg), which translates to reduced switching losses and faster switching speeds.

Applications

The NRVTSA4100T3G is suitable for a range of applications, including but not limited to:

  • Load/Power Switching
  • Battery Management Systems
  • DC/DC Converters
  • Power Distribution Networks
  • Portable Devices

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NRVTSA4100T3G is no exception. This P-Channel MOSFET is manufactured to high standards, ensuring that it delivers consistent performance and reliability. It is RoHS compliant, reflecting the company's dedication to environmental responsibility.

Conclusion

The NRVTSA4100T3G from ON Semiconductor is a powerful solution for designers looking to optimize their power management systems. Its combination of low on-state resistance, high current capability, and efficient thermal management make it an excellent choice for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3068 $52.2720
85+ $1.2241 $104.0485
130+ $1.1828 $153.7640
185+ $1.1000 $203.5000
240+ $1.0587 $254.0880
295+ $1.0173 $300.1035
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,690 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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