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NGD8205NT4G

Part No NGD8205NT4G
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 390V 20A 125W DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 390V
Maximum Current Collector 20A
Pulsed Collector Current 50A
Collector-emitter saturation voltage(Max) 1.9V @ 4.5V, 20A
Maximum Power Dissipation 125W
Input Type Logic
Turn-on and Turn-off delay time -/5μs
Testing Conditions 300V, 9A, 1 kOhm, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 1082980-NGD8205NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NGD8205NT4G CAD Model

Description

ON Semiconductor NGD8205NT4G: An Efficient IGBT Solution for High-Power Applications

The NGD8205NT4G is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is part of ON Semiconductor's high-performance power management portfolio and is specifically engineered to cater to high-power applications that demand efficiency, reliability, and thermal performance.

Key Features and Benefits

  • High Current Capability: The NGD8205NT4G is capable of handling continuous collector currents up to 20A, making it suitable for a variety of power-intensive applications.
  • Low Saturation Voltage: With a typical collector-emitter saturation voltage of 1.7V, this IGBT ensures reduced conduction losses, enhancing overall system efficiency.
  • Fast Switching Speed: The device boasts a fast switching speed, which is essential for reducing switching losses and improving performance in applications such as inverters and converters.
  • Co-Packaged Diode: The NGD8205NT4G includes a free-wheeling diode co-packaged with the IGBT. This feature simplifies circuit design and reduces component count, leading to a more compact and cost-effective solution.
  • Robustness: The device is characterized by its ruggedness and is rated for a TJ(max) of 175°C, ensuring reliable operation even under extreme conditions.
  • Enhanced Thermal Performance: ON Semiconductor's advanced package design facilitates superior thermal performance, enabling the IGBT to operate efficiently at high temperatures.

Applications

The NGD8205NT4G is ideal for a broad range of applications, including:

  • Automotive ignition coils
  • Motor control circuits
  • DC-DC converters
  • Power inverters
  • Switch Mode Power Supplies (SMPS)

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The NGD8205NT4G is compliant with RoHS and Halogen-Free standards, ensuring that it meets the latest environmental regulations for electronic components.

In summary, the NGD8205NT4G from ON Semiconductor is an excellent choice for designers looking for a high-performance IGBT that offers efficiency, speed, and robustness for their power management applications. Its integrated features and compliance with environmental standards make it a forward-thinking solution for today's and tomorrow's energy challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6645 $58.2575
85+ $1.3658 $116.0930
135+ $1.3231 $178.6185
185+ $1.2804 $236.8740
235+ $1.2377 $290.8595
315+ $1.1097 $349.5555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,300 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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