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NCP81080DR2G

Part No NCP81080DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 8SOIC / Half-Bridge Gate Driver IC TTL 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs)>PMIC - Gate Drivers
Mfr onsemi
Package Tape & Reel
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 5.5V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 1.8V
Current - Peak Output (Source, Sink) 500mA, 800mA
Input Type TTL
Rise / Fall Time (Typ) 19ns, 17ns
Temperature Range - Operating -40°C ~ 140°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NCP81080
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Other Names NCP81080DR2GOSCT,NCP81080DR2GOSDKR,2156-NCP81080DR2G-OS,ONSONSNCP81080DR2G,NCP81080DR2GOSTR,2832-NCP81080DR2GTR,NCP81080DR2G-ND
Standard Package 2,500
Win Source Part Number 981113-NCP81080DR2G
Ultra Librarian 3D Model Ultra Librarian NCP81080DR2G CAD Model

Description

The NCP81080DR2G is a high-performance, dual MOSFET driver designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This advanced driver is tailored to meet the demanding requirements of fast-switching applications, including computing, telecom, and networking equipment. Its compact form factor and efficient design make it an ideal solution for driving N-channel power MOSFETs in synchronous buck converters, which are widely used in point-of-load (POL) modules and voltage regulator modules (VRMs).

Key Features

  • High Drive Capability: The NCP81080DR2G is capable of providing high peak current drive, with a 3A sourcing and 2A sinking capability, ensuring rapid charging and discharging of the gate capacitance of MOSFETs for fast switching performance.
  • Adaptive Dead Time Control: It features adaptive dead time control that helps to optimize efficiency by minimizing the dead time between the high-side and low-side drives, reducing crossover losses.
  • Tri-State PWM Input: The inclusion of a tri-state PWM input allows for easy interfacing with the controller and provides a shutdown feature to ensure safe operation under fault conditions.
  • Cross-Conduction Prevention: Built-in cross-conduction prevention logic further enhances system reliability by preventing simultaneous conduction of both MOSFETs.
  • Under-Voltage Lockout (UVLO): The NCP81080DR2G is equipped with UVLO protection on both the high-side and low-side drivers, ensuring the device operates only when sufficient supply voltage is present.

Applications

The versatility of the NCP81080DR2G makes it suitable for a wide range of applications, including:

  • Desktop and Server VRMs and POL Modules
  • Telecom and Networking Power Supplies
  • DC-DC Converters
  • High-Density Power Modules

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The NCP81080DR2G is compliant with RoHS (Restriction of Hazardous Substances) and is lead-free, making it a suitable choice for eco-conscious manufacturers looking to reduce the environmental impact of their products.

Package and Availability

The NCP81080DR2G comes in a compact 10-DFN (3x3) package, providing a space-saving solution without compromising performance. It is available for order in tape and reel format, facilitating ease of integration into automated manufacturing processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,750 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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