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NCP5183DR2G

Part No NCP5183DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 8SOIC / Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs)>PMIC - Gate Drivers
Mfr onsemi
Package Tape & Reel
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 18V
Logic Voltage - VIL, VIH 1.2V, 2.5V
Current - Peak Output (Source, Sink) 4.3A, 4.3A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V
Rise / Fall Time (Typ) 12ns, 12ns
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NCP5183
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Other Names NCP5183DR2GOSTR,NCP5183DR2GOSDKR,NCP5183DR2GOSCT
Standard Package 2,500
Win Source Part Number 1201321-NCP5183DR2G
Ultra Librarian 3D Model Ultra Librarian NCP5183DR2G CAD Model

Description

ON Semiconductor NCP5183DR2G High Voltage Half-Bridge Driver

The NCP5183DR2G is a high-performance, high voltage half-bridge driver designed and manufactured by ON Semiconductor, a leader in semiconductor solutions. This compact and efficient integrated circuit is engineered to drive N-channel power MOSFETs or IGBTs in a half-bridge configuration, making it an ideal choice for a variety of power conversion applications including switch-mode power supplies, motor controllers, and inverter systems.

With a wide operating voltage range of 10 V to 20 V, the NCP5183DR2G offers great flexibility for different power levels. It boasts a high current drive capability of up to 1.5 A for both the high-side and low-side outputs, ensuring efficient switching performance for power devices. The driver's high voltage capability, up to 600 V, allows it to handle the demands of high voltage applications, providing reliable operation under challenging conditions.

The NCP5183DR2G features an independent high-side and low-side drive with a programmable dead-time insertion capability, which helps prevent shoot-through currents in the power stage, enhancing system reliability and performance. The device also includes undervoltage lockout protection for both the high-side and low-side to ensure proper operation only when the supply voltage is sufficient.

This driver incorporates a bootstrap diode for the high-side drive, which simplifies the circuit design by reducing external component count. The fast propagation delays and rise/fall times of the NCP5183DR2G contribute to improved switching speeds, reducing switching losses and improving overall system efficiency.

ON Semiconductor's NCP5183DR2G is available in a compact SOIC-8 package, which is suitable for space-constrained applications. Its robust design ensures reliable performance over a wide temperature range, making it a versatile solution for various industrial, automotive, and consumer electronics applications.

In summary, the NCP5183DR2G from ON Semiconductor is a robust and efficient half-bridge driver that provides high voltage handling capability, high current drive, and advanced protection features to ensure optimal performance in a wide range of high-power electronics applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7235 $51.7050
75+ $1.4141 $106.0575
110+ $1.3699 $150.6890
155+ $1.3258 $205.4990
200+ $1.2816 $256.3200
265+ $1.1490 $304.4850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,509 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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