The MTD4N20ET4 is a high-performance, enhanced mode N-channel power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of a wide range of electronic applications, providing efficient power management and high reliability.

Key Features

• Device Type: N-Channel MOSFET
• Package: DPAK (TO-252) surface mount package for compact design
• Voltage Rating: 200V drain-to-source voltage (V_DS) provides a wide operating range
• Current Handling: Continuous drain current (I_D) of up to 3.6A at 25°C, ensuring robust performance for a variety of applications
• R_DS(on): Low on-resistance of typically 1.25Ω at V_GS = 10V, minimizing power losses and improving efficiency
• Gate Charge: Low total gate charge (Q_G) to reduce switching losses
• Temperature Performance: Operates over an extended temperature range, with a maximum junction temperature of 175°C
• ESD Protection: Built-in electrostatic discharge protection for increased reliability

Applications

The MTD4N20ET4 is ideally suited for a variety of applications that require high efficiency and power density. These include:

• Switching regulators
• Switch mode power supplies (SMPS)
• Motor control systems
• LED lighting solutions
• Automotive applications
• Power management tasks in consumer and industrial electronics

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The MTD4N20ET4 is no exception, with rigorous testing and quality control measures in place to ensure consistent performance. Whether you are designing power supplies or innovating in the automotive space, you can trust ON Semiconductor components to deliver the efficiency and durability your products require.