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MMT05B230T3G

Part No MMT05B230T3G
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description THYRISTOR 170V 150A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Circuit Protection
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Voltage - Breakover 265V
Voltage - Off State 170V
Voltage - On State 3V
Current - Peak Pulse (8/20μs) 150A
Peak Pulse Current(Ippm) 50A
Current - Hold (Ih) 150mA
Number of Elements 1
Capacitance 75pF
Mounting SMD (SMT)
Dimension DO-214AA, SMB
Win Source Part Number 140310-MMT05B230T3G
Ultra Librarian 3D Model Ultra Librarian MMT05B230T3G CAD Model

Description

ON Semiconductor MMT05B230T3G - Power MOSFET

The MMT05B230T3G is a high-performance Power MOSFET produced by ON Semiconductor, a leading provider of semiconductor-based solutions. This device is designed for a variety of applications that require efficient power management and conversion, including DC-DC converters, motor drives, and power supply systems. The MMT05B230T3G is a testament to ON Semiconductor's commitment to providing energy-efficient devices without compromising on performance.

This MOSFET features a 230V drain-source voltage (VDS), making it suitable for high-voltage operations. With a continuous drain current (ID) of 5A, it can handle significant power without overheating, thanks to its low on-resistance (RDS(on)). The low on-resistance ensures minimal power loss during operation, leading to improved overall efficiency and reliability of the system in which it is deployed.

The MMT05B230T3G comes in a compact surface-mount D2PAK (TO-263) package, which is ideal for applications where space is at a premium. Its package is designed to provide excellent power dissipation characteristics, ensuring the device remains cool even under heavy loads. Additionally, the device features a fast switching speed, which is crucial for reducing switching losses and improving the performance of high-frequency power circuits.

ON Semiconductor has equipped the MMT05B230T3G with robust protection features. It boasts an integrated Zener diode which provides gate-source voltage (VGS) protection, shielding the device from voltage spikes that could potentially cause damage. This feature enhances the durability of the MOSFET and ensures a longer operational lifespan, making it a reliable choice for critical applications.

For engineers and designers looking for a MOSFET that offers both high-voltage capability and energy efficiency, the MMT05B230T3G from ON Semiconductor is an excellent choice. Its combination of low on-resistance, fast switching, and protective features make it a versatile component for modern electronic designs that demand high performance and reliability.

Key Features:

  • 230V Drain-Source Voltage (VDS)
  • 5A Continuous Drain Current (ID)
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Integrated Zener Diode for Gate-Source Voltage Protection
  • Surface-Mount D2PAK (TO-263) Package

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2619 $58.9275
540+ $0.2150 $116.1000
835+ $0.2081 $173.7635
1,150+ $0.2014 $231.6100
1,485+ $0.1947 $289.1295
1,985+ $0.1746 $346.5810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,300 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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