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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 4A
Rds On (Maximum) at Id, Vgs 83mOhm at 2A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs 4.6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 375pF at 10V
Mounting Style SMD
Supplier Device Package 6-MCPH
Manufacturer Package 6-SMD, Flat Leads
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 225386-MCH6321-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MCH6321-TL-E CAD Model

Description

The ON Semiconductor MCH6321-TL-E is a high-performance P-Channel MOSFET designed to deliver efficient power management and conversion for a wide range of electronic applications. This semiconductor device is well-suited for load switch and power management tasks within consumer, industrial, and automotive electronics due to its low on-resistance and high switching speed.

Key Features

  • Low On-Resistance: The MCH6321-TL-E boasts an exceptionally low on-resistance, which minimizes power loss and improves overall efficiency during operation.
  • High-Speed Switching: Designed for applications requiring fast switching, this MOSFET provides rapid transition performance, which is crucial for high-frequency power supplies and converters.
  • Power Saving: The device's low threshold voltage ensures that it can be driven at lower voltages, reducing the power required for switching and thus saving energy.
  • Compact Package: Encased in a small, surface-mount package, the MCH6321-TL-E saves valuable board space, making it ideal for space-constrained applications.
  • High Reliability: Built to ON Semiconductor's stringent quality standards, the MOSFET is designed for long-term reliability and stable operation in a variety of conditions.

Applications

The versatility of the MCH6321-TL-E allows it to be used in a multitude of applications, including but not limited to:

  • Power management modules
  • DC/DC converters
  • Battery-powered devices
  • Load switches
  • Motor control circuits
  • Automotive electronics

Technical Specifications

Some of the technical specifications of the MCH6321-TL-E include a drain-to-source voltage (Vdss) of -30V, a continuous drain current (Id) of -6A, and a power dissipation (Pd) of 1.25W. It operates over a wide temperature range, ensuring functionality across various environments.

For engineers and designers looking for a reliable and efficient P-Channel MOSFET, the ON Semiconductor MCH6321-TL-E offers a compelling solution with its balance of performance, size, and power efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2196 $50.5080
555+ $0.1802 $100.0110
860+ $0.1746 $150.1560
1,185+ $0.1689 $200.1465
1,535+ $0.1633 $250.6655
2,050+ $0.1464 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 8,343 pieces
MOQ: 230 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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