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MBRA210T3G

Part No MBRA210T3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Diodes,Rectifiers - Single
Manufacturer ON Semiconductor
Win Source Part Number 316530-MBRA210T3G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MBRA210T3G CAD Model

Description

The MBRA210T3G is a state-of-the-art Schottky Barrier Rectifier designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This high-performance diode is engineered to offer low forward voltage drop, high current capability, and fast switching performance. It is housed in a compact SMA package, making it suitable for high-density circuit board designs.

Key Features

  • High Surge Capacity: The MBRA210T3G can handle a high surge current, making it ideal for applications that experience occasional overcurrent conditions.
  • Low Power Loss: Its low forward voltage drop translates to reduced power loss during operation, which enhances overall efficiency and minimizes thermal stress on the device.
  • Fast Switching Speed: This rectifier switches on and off rapidly, which is crucial for high-frequency applications and helps reduce switching losses.
  • Robust Thermal Performance: The device can operate at a junction temperature range of -55°C to +150°C, ensuring reliable performance under a wide range of thermal conditions.
  • Environmental Compliance: The MBRA210T3G is Pb-Free, Halogen-Free/BFR-Free, and RoHS compliant, making it an environmentally friendly choice for electronic designs.

Applications

The versatility of the MBRA210T3G allows it to be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Automotive applications
  • Free-wheeling diodes
  • Reverse battery protection
  • Portable devices

Product Specifications

The MBRA210T3G has a peak repetitive reverse voltage (VRRM) of 100V and a maximum average forward rectified current (IF(AV)) of 2A. Its forward voltage (VF) is specified at a maximum of 0.82V at 2A, and its peak forward surge current (IFSM) is 40A. The rectifier's operating junction temperature range is between -55°C to +150°C, making it suitable for high-temperature environments.

Conclusion

ON Semiconductor's MBRA210T3G Schottky Barrier Rectifier is an excellent choice for designers seeking a reliable, efficient, and environmentally friendly diode for their power management and conversion applications. Its compact size, coupled with its robust performance characteristics, makes it a valuable component in modern electronic systems.

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