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MBR10100MFST3G

Part No MBR10100MFST3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 100V 10A 5DFN / Diode Schottky 100 V 10A Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr onsemi
Package Tape & Reel (TR)
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 100 V
Mounting SMD (SMT)
Package / Case 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number MBR10100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 5,000
Win Source Part Number 1216053-MBR10100MFST3G
Ultra Librarian 3D Model Ultra Librarian MBR10100MFST3G CAD Model

Description

MBR10100MFST3G - ON Semiconductor

The MBR10100MFST3G is a state-of-the-art Schottky Barrier Rectifier designed by ON Semiconductor, renowned for its high-efficiency and reliability in power management applications. This rectifier is specifically engineered to meet the rigorous demands of high-frequency rectification and free-wheeling operations in switching power supplies, converters, and other power electronics applications.

Key Features

  • High Forward Surge Capability: This device is capable of handling high surge currents, making it ideal for applications that experience transient overcurrent conditions.
  • Low Forward Voltage Drop: The MBR10100MFST3G exhibits a low forward voltage drop, which results in reduced power loss and improved efficiency during operation.
  • High Junction Temperature: With a maximum operating junction temperature of 150°C, this rectifier can withstand high thermal environments, maintaining stability and performance.
  • Reverse Voltage: It is rated for a maximum reverse voltage of 100V, ensuring suitability for a wide range of applications where high reverse voltages are encountered.
  • High Purity, High Temperature Epoxy Encapsulation: The device is encapsulated in an epoxy that can endure high temperatures, providing physical protection and enhancing its reliability and lifespan.

Applications

The MBR10100MFST3G is versatile and can be used across various applications, including:

  • Switching power supplies
  • Power inverters
  • DC-DC converters
  • Free-wheeling diodes
  • OR-ing diode
  • Automotive applications

Package and Compliance

The device comes in a Power Mite 3 surface mount package, which is not only compact but also rugged, designed for optimal thermal performance and space-saving on PCBs. Additionally, the MBR10100MFST3G is compliant with RoHS and Halogen-Free standards, ensuring environmental safety and suitability for use in green products.

With its robust design, high efficiency, and ON Semiconductor's commitment to quality, the MBR10100MFST3G is an excellent choice for designers looking to enhance the performance and reliability of their power management systems.

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