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HUF75645S3S

Part No HUF75645S3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs | MOSFET N-CH 100V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 14mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 238nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3790pF at 25V
Power Dissipation (Maximum) 310W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1182441-HUF75645S3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian HUF75645S3S CAD Model

Description

Product Overview: HUF75645S3S by ON Semiconductor

The HUF75645S3S is a high-performance, N-Channel UltraFET Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This MOSFET is engineered to meet the demanding requirements of modern electronic circuits, delivering efficiency, reliability, and high power density in a compact package.

Key Features

  • High Current Capability: The HUF75645S3S offers a robust continuous drain current (ID) of 75A, making it suitable for high-power applications.
  • Low On-Resistance: With an RDS(on) of just 8.0 mOhms, this MOSFET ensures minimal power loss and improved efficiency during operation.
  • High-Temperature Performance: It can operate effectively at extended temperatures, with a maximum junction temperature of 175°C, providing reliable performance even under thermal stress.
  • Advanced Process Technology: Utilizing ON Semiconductor's proprietary UltraFET process, the HUF75645S3S achieves excellent switching performance and reduced gate charge.
  • Voltage Rating: The device is rated for a maximum drain-source voltage (VDS) of 30V, which is ideal for a variety of low to medium voltage applications.

Applications

The versatility of the HUF75645S3S makes it an excellent choice for a wide range of applications. It is commonly used in:

  • Power Supply Circuits
  • DC to DC Converters
  • Motor Drives
  • Automotive Applications
  • Power Management Solutions

Package and Quality Assurance

The HUF75645S3S is packaged in a TO-263 (D2PAK) form factor, which is known for its robustness and excellent thermal performance. ON Semiconductor's commitment to quality ensures that each MOSFET meets stringent standards, providing designers with a reliable component for their high-power electronic designs.

Summary

With its combination of high current capacity, low on-resistance, and high-temperature operation, the HUF75645S3S from ON Semiconductor is an outstanding solution for designers looking to enhance the efficiency and reliability of their power management systems. Its advanced technology and versatile applications make it a valuable component in any high-performance power electronics system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7932 $58.7592
15+ $8.0353 $120.5295
23+ $7.7847 $179.0481
31+ $7.5329 $233.5199
40+ $7.2823 $291.2920
54+ $6.5292 $352.5768
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,445 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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