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HGTG12N60B3

Part No HGTG12N60B3
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 27A 104W TO247
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT - 600 V 27 A 104 W Through Hole TO-247-3
Manufacturer ON Semiconductor
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name HGTG12N60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 300
Popularity High
Supply and Demand Status Balance
Win Source Part Number 920218-HGTG12N60B3
Ultra Librarian 3D Model Ultra Librarian HGTG12N60B3 CAD Model

Description

The HGTG12N60B3 is a sophisticated Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, designed for a wide range of high-efficiency applications. This IGBT boasts a robust and durable construction, making it suitable for demanding environments and applications where reliability is paramount.

Featuring advanced field stop technology, the HGTG12N60B3 offers optimized performance that combines the best attributes of both MOSFETs and bipolar transistors. This IGBT provides a low on-state voltage drop due to its low saturation voltage, leading to improved efficiency and reduced power losses during operation.

With a continuous collector current rating of 54A at 25°C, and a pulsed collector current of up to 216A, the HGTG12N60B3 is capable of handling high-power applications with ease. Its maximum collector-emitter voltage is rated at 600V, which allows for a wide safety margin in various circuit designs. This device is particularly well-suited for applications such as motor drives, uninterruptible power supplies (UPS), inverters, and power factor correction circuits.

The HGTG12N60B3 also features a co-packaged freewheeling diode with a soft recovery characteristic, which minimizes switching noise and reduces electromagnetic interference (EMI). This makes it an excellent choice for applications where noise reduction is crucial.

For ease of integration, the HGTG12N60B3 comes in a TO-247 package, which is widely used and recognized in the industry. This package provides excellent thermal performance and is compatible with standard mounting and heat sinking methods.

ON Semiconductor's commitment to quality ensures that the HGTG12N60B3 IGBT is manufactured to the highest standards, offering reliability and performance for designers seeking to create efficient and robust power management systems. The device is RoHS compliant, adhering to environmental standards and regulations.

In summary, the HGTG12N60B3 from ON Semiconductor is a high-performance IGBT that offers a balance of efficiency and power handling, making it an ideal choice for a variety of power applications.

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