ON Semiconductor H11C5 Optoisolator
The ON Semiconductor H11C5 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. This optically coupled isolator is designed to provide electrical insulation between input and output, making it an ideal choice for applications that require high-voltage insulation and signal transfer via light waves.
Key Features:
- High Isolation Voltage: The H11C5 provides a high isolation voltage of 5300 Vrms, ensuring that the input and output are adequately insulated from each other. This feature is critical in preventing high voltages from affecting the low-voltage side, thereby safeguarding sensitive electronics.
- High Current Transfer Ratio (CTR): With a CTR of 20% minimum at IF=10 mA, VCE=10 V, the H11C5 ensures a reliable signal transfer from the input LED to the output phototransistor.
- Standard Dual-in-Line Package: Its industry-standard DIP configuration allows for easy integration into a wide range of circuit designs and provides compatibility with various socket or surface-mount assembly techniques.
- Underwriters Laboratory (UL) Recognized: The H11C5 has been tested and recognized by UL for safety, which gives designers and engineers confidence in its reliability and performance in their applications.
Applications:
The H11C5 optoisolator is versatile and can be used in a variety of applications, including:
- Signal switching
- Signal modulation
- Line receivers
- Feedback control systems
- Power supply regulators
- Computer peripheral interfaces
Technical Specifications:
Parameter
Value
Isolation Voltage
5300 Vrms
Current Transfer Ratio (CTR)
20% Min @ IF=10 mA, VCE=10 V
Input Diode Forward Voltage
1.5 V Max @ IF=10 mA
Collector-Emitter Breakdown Voltage
70 V Min
Operating Temperature
-55°C to +100°C
With its robust design and high isolation voltage, the ON Semiconductor H11C5 is an excellent choice for protecting electronic circuits in high-voltage environments while maintaining signal integrity.
