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FQPF4N90

Part No FQPF4N90
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 900V N-Channel MOSFET | MOSFET N-CH 900V 2.5A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 2.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.3Ohm at 1.25A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 47W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175482-FQPF4N90
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF4N90 CAD Model

Description

ON Semiconductor FQPF4N90 - N-Channel QFET® MOSFET

The FQPF4N90 from ON Semiconductor is a high-performance N-Channel QFET® MOSFET designed for a variety of applications that require efficient power management and high voltage operation. This MOSFET is a fundamental component in electronic circuits, renowned for its efficiency and reliability. With a 900V drain-source voltage (Vds) and a 4A continuous drain current (Id), the FQPF4N90 is well-suited for high voltage applications such as power supplies, converters, and motor control systems.

The device features a low gate charge (Qg), which enhances its switching performance, making it an ideal choice for high-speed switching applications. The low on-resistance (Rds(on)) of the FQPF4N90 minimizes conduction losses, thus improving overall energy efficiency. This characteristic is particularly important for power-intensive applications, as it helps in reducing the heat generated and therefore the need for additional cooling systems.

Another significant advantage of the FQPF4N90 is its robustness. The device is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring long-term reliability even under stressful conditions. This feature makes it an excellent choice for applications that may experience unexpected voltage spikes or surges.

The FQPF4N90 comes in a TO-220F package, which is known for its good thermal performance due to its full-pack design that isolates the mounting surface from the semiconductor. This package design not only simplifies the insulation requirements but also enhances safety by reducing the risk of electrical shorts.

ON Semiconductor's commitment to environmental sustainability is reflected in the FQPF4N90, which is RoHS compliant, meaning it does not contain hazardous substances such as lead, cadmium, or mercury. This compliance ensures that the product is environmentally friendly and suitable for use in green applications.

In summary, the FQPF4N90 N-Channel QFET® MOSFET from ON Semiconductor is a versatile and durable component that offers excellent performance in high voltage and power-efficient applications. Its combination of low on-resistance, high-speed switching, robustness, and environmental compliance makes it a smart choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6888 $58.5480
205+ $0.5652 $115.8660
320+ $0.5475 $175.2000
440+ $0.5298 $233.1120
565+ $0.5123 $289.4495
755+ $0.4592 $346.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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