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FQPF2N60

Part No FQPF2N60
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 600V N-Channel MOSFET | MOSFET N-CH 600V 1.6A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 1.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.7Ohm at 800mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 28W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175474-FQPF2N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF2N60 CAD Model

Description

The FQPF2N60 is a robust and versatile N-Channel QFET® MOSFET designed and manufactured by ON Semiconductor. It is widely recognized for its high efficiency and reliability in a variety of electronic applications. This particular MOSFET operates at a drain-source voltage (VDS) of 600V, which makes it suitable for high-voltage power conversion systems.

Key Features

  • High Voltage Tolerance: With a maximum VDS of 600V, the FQPF2N60 is capable of handling high voltage applications, ensuring stability and reliability in harsh electrical environments.
  • Low On-Resistance: The device features a low on-state resistance (RDS(on)), minimizing energy loss and improving efficiency in power conversion and switching applications.
  • High-Speed Switching: The fast switching speed of the FQPF2N60 is ideal for applications requiring rapid on-off cycles, contributing to better performance and reduced switching losses.
  • Extended Safe Operating Area: Its robustness is further enhanced by an extended safe operating area (SOA), making it suitable for high-current pulse applications and offering protection against unexpected conditions.
  • RoHS Compliant: The FQPF2N60 complies with RoHS standards, ensuring that it is free from hazardous substances and meets global environmental regulations.

Applications

The versatility of the FQPF2N60 MOSFET makes it an excellent choice for a wide range of applications. It is commonly used in:

  • Power supplies
  • PFC (Power Factor Correction) circuits
  • AC-DC converters
  • DC-DC converters
  • Motors and motor control systems
  • Inverters
  • Lighting systems

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the FQPF2N60 MOSFET provides reliable and consistent performance. The device's construction is optimized for thermal stability, and its high breakdown voltage ensures it can handle transient over-voltage conditions without failing. As a result, designers and engineers can rely on the FQPF2N60 for their high-voltage and high-efficiency requirements in a broad array of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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