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FQP19N20

Part No FQP19N20
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 200V N-Channel MOSFET | MOSFET N-CH 200V 19.4A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 19.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 150mOhm at 9.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 40nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1600pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175424-FQP19N20
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP19N20 CAD Model

Description

The ON Semiconductor FQP19N20 is a high-performance N-Channel QFET® MOSFET designed to deliver efficient power conversion and control in a wide range of applications. This device features a robust and durable design, making it an ideal choice for engineers seeking reliability and performance in their power management solutions.

Key Features:

  • High Drain-Source Breakdown Voltage (VDSS): The FQP19N20 operates at a 200V drain-source breakdown voltage, providing a substantial margin for high-voltage applications and ensuring stable operation under varying conditions.
  • Low On-Resistance (RDS(on)): With an on-resistance of only 0.27Ω, this MOSFET ensures minimal power loss during conduction, enhancing overall efficiency and reducing thermal stress on the system.
  • High Continuous Drain Current (ID): It offers a continuous drain current of 19A, enabling the handling of high current loads without performance degradation.
  • Fast Switching Performance: The FQP19N20 is designed for fast switching, which is critical for reducing switching losses in applications such as switching power supplies and motor control circuits.
  • Low Gate Charge (QG): A low gate charge facilitates faster switching speeds and reduces the drive power required, contributing to the overall efficiency of the system.
  • Extended Temperature Range: This device can operate over an extended temperature range, making it suitable for demanding environments and ensuring reliable performance under thermal stress.

Applications:

The FQP19N20 is versatile and can be used in a variety of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Pulse Width Modulated (PWM) Controls
  • Motor Drives
  • Inverters
  • Lighting Systems
  • Automotive Applications

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The FQP19N20 MOSFET is no exception, offering excellent performance and reliability, backed by rigorous testing and quality assurance processes, ensuring it meets the stringent requirements of industrial and automotive industries.

With its combination of high-voltage capability, low on-resistance, high current handling, and fast switching, the FQP19N20 from ON Semiconductor is an excellent choice for designers who require a robust and efficient N-Channel MOSFET for their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.3026 $59.0070
470+ $0.2483 $116.7010
720+ $0.2414 $173.8080
995+ $0.2333 $232.1335
1,285+ $0.2252 $289.3820
1,715+ $0.2021 $346.6015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,090 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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