ON Semiconductor FQP17N08 N-Channel QFET® MOSFET

The ON Semiconductor FQP17N08 is a high-performance N-Channel QFET® MOSFET designed to deliver efficient power management and conversion. This MOSFET is an essential component for designers looking to improve system reliability and efficiency in a variety of applications, including power supplies, motor drives, and lighting systems.

Key Features

• High Drain-Source Voltage (V_DS): The FQP17N08 is capable of withstanding a maximum drain-source voltage of 80V, making it suitable for high-voltage applications.
• Continuous Drain Current (I_D): It offers a robust continuous drain current of 17A, ensuring high current handling capability.
• Low On-Resistance (R_DS(on)): With an R_DS(on) of 0.135Ω, this MOSFET provides reduced power loss and improved efficiency.
• Fast Switching: The device is designed for fast switching, which is crucial for reducing switching losses and improving performance in high-frequency applications.
• TO-220 Package: Housed in a TO-220 package, the FQP17N08 offers a balance between thermal performance and size, making it suitable for a wide range of applications.

Applications

• DC/DC Converters
• Power Supply Units
• Motor Control Systems
• Automotive Applications
• Switch Mode Power Supplies (SMPS)
• LED Lighting

The FQP17N08 is built with ON Semiconductor's advanced QFET® technology, which provides superior switching performance and thermal stability. Its robustness is further enhanced by its 175°C maximum junction temperature, allowing for operation in high-temperature environments.

With its combination of high performance, reliability, and versatility, the ON Semiconductor FQP17N08 N-Channel QFET® MOSFET is an ideal solution for engineers looking to optimize the power efficiency and durability of their designs.