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FQP12N60

Part No FQP12N60
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 600V N-Channel MOSFET | MOSFET N-CH 600V 10.5A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 10.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 700mOhm at 5.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175418-FQP12N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP12N60 CAD Model

Description

ON Semiconductor FQP12N60 N-Channel QFET MOSFET

The FQP12N60 from ON Semiconductor is a high-performance, N-Channel QFET® MOSFET designed for a variety of applications requiring high voltage and current handling capabilities. This MOSFET features a robust 600V, 12A rating, making it an ideal choice for power supply, lighting, motor control, and inverter applications.

Key Features

  • High Voltage and Current: With a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 12A, the FQP12N60 is built to handle demanding power tasks efficiently.
  • Low Gate Charge (Qg): The device offers a reduced gate charge, which enhances the switching performance and results in lower switching losses.
  • Low Crss (Reverse Transfer Capacitance): A characteristic that helps in achieving high-speed switching and reduces the losses during the transition period.
  • Rugged: The device is designed to endure harsh conditions, ensuring reliability and a long operational life.
  • High-Speed Switching: Engineered for fast switching applications, the FQP12N60 can handle high-frequency operations with ease.
  • TO-220 Package: Encased in a TO-220 package, the FQP12N60 offers a compact solution while ensuring thermal performance for heat dissipation.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • DC-DC Converters
  • Motor Drives
  • LED Lighting
  • Uninterruptible Power Supplies (UPS)

The FQP12N60 integrates ON Semiconductor's advanced QFET® technology, which provides superior performance in terms of power efficiency and reliability. The device's threshold voltage (Vth) is optimized for minimal conduction losses, and its robust body diode can handle high surge currents. This MOSFET is also characterized by its low on-state resistance (Rds(on)), which minimizes conduction losses and enhances overall system efficiency.

Whether you're designing a power management system or looking to improve the efficiency of an existing circuit, the FQP12N60 from ON Semiconductor is a solid choice that combines performance, durability, and energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9921 $59.5260
145+ $0.8143 $118.0735
220+ $0.7889 $173.5580
305+ $0.7635 $232.8675
395+ $0.7380 $291.5100
525+ $0.6618 $347.4450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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