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FQB5N60CTM

Part No FQB5N60CTM
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 600V 4.5A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 4.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.5Ohm at 2.25A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 670pF at 25V
Power Dissipation (Maximum) 3.13W, 100W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 714259-FQB5N60CTM
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB5N60CTM CAD Model

Description

The ON Semiconductor FQB5N60CTM is a high-performance N-Channel QFET® MOSFET designed for a wide range of applications that demand efficiency, reliability, and thermal management. This semiconductor device is part of ON Semiconductor's extensive MOSFET portfolio and is engineered to meet the stringent requirements of modern electronic circuits.

Key Features

  • 600V, 4.5A Rating: The FQB5N60CTM is capable of handling continuous drain currents up to 4.5A, with a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.
  • Low Gate Charge (Qg): Designed with a low gate charge, this MOSFET ensures reduced switching losses, enabling efficient power conversion in various circuits.
  • RDS(on) = 2.5 Ohm: With a low on-state resistance, the FQB5N60CTM minimizes conduction losses, which is crucial for power efficiency and thermal performance.
  • High-Speed Switching: The device features high-speed switching capabilities, which are essential for applications like switching power supplies, lighting, and power inverters.
  • RoHS Compliant: The FQB5N60CTM is RoHS compliant, ensuring that it meets the environmental standards by restricting the use of certain hazardous substances in its manufacture.

Applications

The FQB5N60CTM MOSFET from ON Semiconductor is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverter Systems
  • DC-DC Converters
  • Motor Control Circuits
  • LED Lighting Solutions

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the FQB5N60CTM is no exception. It is designed to provide reliable performance under a wide range of operating conditions. Its robust construction ensures a long operational life, even in demanding environments.

Conclusion

The FQB5N60CTM MOSFET is an exemplary component that combines high voltage capability, efficiency, and speed, making it an excellent choice for designers looking to optimize their power management systems. ON Semiconductor's dedication to innovation and quality makes the FQB5N60CTM a reliable and efficient solution for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3290 $50.9950
375+ $0.2700 $101.2500
575+ $0.2616 $150.4200
795+ $0.2531 $201.2145
1,025+ $0.2447 $250.8175
1,370+ $0.2194 $300.5780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,293 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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