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FGA30N65SMD

Part No FGA30N65SMD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 60A 300W TO3P-3 / 650 V, 30 A Field Stop IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 90A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 30A
Power - Max 300W
Switching Energy 716μJ (on), 208μJ (off)
Input Type Standard
Gate Charge 87nC
Td (on/off) at 25°C 14ns/102ns
Test Condition 400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr) 35ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811911-FGA30N65SMD
Ultra Librarian 3D Model Ultra Librarian FGA30N65SMD CAD Model

Description

ON Semiconductor FGA30N65SMD IGBT

The FGA30N65SMD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This IGBT is part of ON Semiconductor's extensive portfolio of energy-efficient devices and is particularly suited for applications requiring fast switching and high efficiency.

Key Features:

  • High Current Capability: The FGA30N65SMD can handle a continuous collector current of up to 30A, making it ideal for heavy-duty applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) of 650V, this IGBT can be used in high voltage circuits, providing reliable performance in a variety of power applications.
  • Low On-Resistance: Low on-state voltage drop due to low on-resistance ensures high efficiency, which is critical in minimizing energy loss and heat generation.
  • Fast Switching Speed: The device offers fast switching characteristics, which is beneficial for reducing switching losses, especially in high-frequency operations.
  • Co-Packaged Diode: Comes with a co-packaged free-wheeling diode which offers additional protection for inductive loads and helps to reduce component count in the circuit design.

Applications:

The FGA30N65SMD is versatile and can be used in a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Motor Drives
  • Switch Mode Power Supplies (SMPS)
  • Solar Inverters
  • Welding Equipment

Advantages:

By incorporating the FGA30N65SMD into your design, you can expect:

  • Enhanced system reliability due to the robustness of the device.
  • Improved power density, which is essential for compact and efficient power designs.
  • Reduction in overall system costs through the integration of the co-packaged diode and reduced component count.
  • Energy savings due to the high efficiency and low power losses of the IGBT.

Quality and Support:

ON Semiconductor is committed to providing high-quality products and offers comprehensive technical support for the FGA30N65SMD. Customers can access a wealth of resources including datasheets, application notes, and design tools to facilitate the integration of this IGBT into their projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7341 $51.9479
45+ $2.2434 $100.9530
70+ $2.1733 $152.1310
96+ $2.1032 $201.9072
123+ $2.0331 $250.0713
165+ $1.8227 $300.7455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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