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FDS4780

Part No FDS4780
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 40V N-Channel PowerTrench MOSFET | MOSFET N-CH 40V 10.8A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 10.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 10.5mOhm at 10.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 40nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1686pF at 20V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SOIC
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1173898-FDS4780
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDS4780 CAD Model

Description

ON Semiconductor FDS4780: High-Performance PowerTrench® MOSFET

The ON Semiconductor FDS4780 is a state-of-the-art PowerTrench® MOSFET designed to deliver high efficiency and performance for a wide range of applications. This advanced power semiconductor device is ideal for use in power management tasks within electronics, offering both low on-resistance and minimal gate charge. Its features make it a top choice for designers looking to optimize power conversion in their designs.

Key Features

  • Low On-Resistance (RDS(on)): The FDS4780 boasts an extremely low on-resistance, which translates into reduced conduction losses and improved overall efficiency in power circuits.
  • High Power Density: With its compact footprint and PowerTrench technology, the FDS4780 offers excellent power density, making it suitable for space-constrained applications.
  • Fast Switching: The device is designed for fast switching applications, which is crucial for reducing switching losses and improving performance in power supplies and converters.
  • Low Gate Charge (Qg): The reduced gate charge ensures lower switching energies, which is beneficial for high-frequency operation and further enhances efficiency.

Applications

The FDS4780 is versatile and can be used in various applications, including:

  • DC/DC converters
  • Power supply load switches
  • Battery management systems
  • Synchronous rectification in AC/DC and isolated DC/DC converters
  • Motor control circuits

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 30V
Continuous Drain Current (ID) 11A
Power Dissipation (PD) 2.5W
Operating Temperature Range -55°C to +150°C

The FDS4780 is a reliable and efficient solution for power management and conversion, backed by ON Semiconductor's commitment to quality and performance. Whether for consumer electronics, industrial systems, or automotive applications, the FDS4780 is designed to meet the rigorous demands of modern power electronics.

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