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FDPF2D3N10C

Part No FDPF2D3N10C
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 100V 222A TO220F / N-Channel Shielded Gate PowerTrench MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 222A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.3mOhm at 100A, 10V
Vgs(th) (Maximum) at Id 4V at 700μA
Gate Charge (Qg) (Maximum) at Vgs 152nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 11180pF at 50V
Power Dissipation (Maximum) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812329-FDPF2D3N10C
Ultra Librarian 3D Model Ultra Librarian FDPF2D3N10C CAD Model

Description

The ON Semiconductor FDPF2D3N10C is a state-of-the-art N-Channel PowerTrench® MOSFET designed to deliver high performance in power switching applications. This device is engineered to minimize on-state resistance while providing robust, reliable, and fast switching performance. It is an ideal solution for a wide range of power management tasks, particularly in compact and energy-sensitive electronics.

Key Features

  • Low On-Resistance: The FDPF2D3N10C boasts an exceptionally low on-resistance (RDS(on)), which translates into reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: With a continuous drain current (ID) rating of up to 84 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
  • High Voltage Rating: The device has a drain-to-source voltage (VDSS) of 100V, providing a good safety margin for applications with high voltage requirements.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process enables the FDPF2D3N10C to achieve low gate charge (Qg) and capacitance (Ciss), leading to reduced switching losses.
  • Fast Switching Speed: The MOSFET's fast switching capabilities ensure efficient operation at high frequencies, which is crucial for power supplies and converters.
  • Thermal Management: The device is housed in an industry-standard TO-220F package that provides excellent thermal characteristics, ensuring reliable operation even under high power and temperature conditions.

Applications

The FDPF2D3N10C is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power inverters
  • Motor drives
  • Power management for computing
  • Switching power supplies

Its robust design and high efficiency make it an excellent choice for designers looking to improve power density and performance in their systems. Whether you're developing power supplies for consumer electronics, industrial automation, or automotive applications, the FDPF2D3N10C from ON Semiconductor is a reliable and powerful component that will help you achieve your design goals.

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