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FDMS86263P

Part No FDMS86263P
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET P-CH 150V 22A POWER 56 / P-Channel PowerTrench MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) at 25°C 4.4A , 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 53mOhm at 4.4A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 63nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 3905pF at 75V
Power Dissipation (Maximum) 2.5W , 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804049-FDMS86263P
Ultra Librarian 3D Model Ultra Librarian FDMS86263P CAD Model

Description

ON Semiconductor FDMS86263P PowerTrench® MOSFET

The ON Semiconductor FDMS86263P is a high-performance PowerTrench® MOSFET designed to deliver superior power efficiency and density, making it an ideal choice for a wide range of applications. This advanced MOSFET technology is engineered to meet the rigorous demands of modern electronic designs, providing a combination of low on-resistance and low gate charge to optimize power conversion in power supplies, motor drives, and other power-intensive applications.

With its compact and robust Power 56 package, the FDMS86263P is optimized for space-constrained environments while maintaining exceptional thermal performance. This allows designers to achieve higher power densities without compromising on reliability or efficiency. The MOSFET's package is designed to offer excellent power dissipation characteristics, ensuring stable operation even under high current conditions.

The FDMS86263P boasts an R<sub>DS(on) of only 2.5 mOhm at V<sub>GS = 10 V, which significantly reduces conduction losses. Its fast switching characteristics are attributed to a low total gate charge (Q<sub>G) of 47 nC, which minimizes switching losses and improves overall system efficiency. This combination of low on-resistance and gate charge makes the FDMS86263P a highly efficient solution for power management tasks.

In addition to its electrical performance, the FDMS86263P is designed with a 100% avalanche tested ruggedness, ensuring reliability and a longer lifespan even under stressful conditions. This feature provides designers with the confidence to operate the device in applications where unexpected voltage spikes may occur.

The FDMS86263P also supports a wide operating temperature range, maintaining performance across various environmental conditions. This makes it suitable for industrial and automotive applications where temperature extremes are common.

Overall, the ON Semiconductor FDMS86263P PowerTrench® MOSFET is a versatile and reliable component that offers an excellent balance of power efficiency, thermal performance, and ruggedness. Its advanced features ensure that it can meet the needs of engineers looking to optimize their power designs for efficiency and space without sacrificing performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7093 $53.1975
155+ $0.6644 $102.9820
235+ $0.6420 $150.8700
335+ $0.5971 $200.0285
440+ $0.5746 $252.8240
545+ $0.5522 $300.9490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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