The ON Semiconductor FDD6680A is a high-performance, N-Channel PowerTrench® MOSFET designed for a wide range of applications that demand high efficiency and reliability. This MOSFET utilizes advanced trench technology to provide excellent RDS(on) and low gate charge, making it suitable for high-efficiency power management tasks.
Key Features
- Low RDS(on): The FDD6680A boasts a very low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
- High Current Capability: With a continuous drain current (ID) of 30A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
- High Power Dissipation: A maximum power dissipation of 48W allows the FDD6680A to withstand significant power during operation without compromising performance.
- Fast Switching: Fast switching speeds are achieved thanks to the low gate charge (Qg), which enhances the MOSFET's performance in switching applications such as DC-DC converters.
- Thermal Management: The device is encapsulated in a TO-252 (DPAK) package, which provides excellent thermal resistance and helps to maintain stability under high-temperature conditions.
Applications
The versatility of the FDD6680A allows it to be used in a variety of applications, including:
- Power supplies
- DC-DC converters
- Motor drives
- Battery management systems
- Load switches
- Synchronous rectification
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
30V
Continuous Drain Current (I<sub>D)
30A
Power Dissipation (P<sub>D)
48W
RDS(on)
8.5mΩ
Gate Charge (Q<sub>g)
15nC
With its robust design and superior electrical characteristics, the ON Semiconductor FDD6680A MOSFET is an excellent choice for designers looking for a reliable and efficient solution for their power management challenges.
