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EFC6604R-TR

Part No EFC6604R-TR
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 6EFCP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Power - Max 1.6W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFBGA
Supplier Device Package 6-EFCP (1.9x1.46)
Base Product Number EFC6604
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 870182-EFC6604R-TR
Ultra Librarian 3D Model Ultra Librarian EFC6604R-TR CAD Model

Description

ON Semiconductor EFC6604R-TR Power MOSFET

The EFC6604R-TR from ON Semiconductor is a high-performance, N-Channel Power MOSFET designed to deliver efficient power management and conversion within electronic systems. This component is particularly suitable for applications that demand low on-resistance, high switching speeds, and minimal power losses. The EFC6604R-TR is commonly utilized in power supplies, DC-DC converters, motor drives, and other power-intensive applications across various industries.

Key Features

  • Low On-Resistance: The device features very low RDS(on), which reduces conduction losses and enhances overall efficiency, making it ideal for high-performance power applications.
  • High Switching Speed: Fast switching capabilities enable the EFC6604R-TR to operate efficiently at high frequencies, which is critical for reducing switching losses and improving power density.
  • Enhanced Thermal Performance: With an excellent thermal design, this MOSFET can dissipate heat effectively, ensuring reliable operation even under high current conditions.
  • Robust Package: The device comes in a compact, surface-mount package that is both durable and space-efficient, making it suitable for modern, high-density circuit designs.

Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 30V
Continuous Drain Current (ID) 14A
Power Dissipation (PD) 2.5W
Operating Temperature Range -55°C to +150°C
RDS(on) 8.5 mΩ

The EFC6604R-TR is a testament to ON Semiconductor's commitment to providing advanced semiconductor solutions that meet the evolving needs of modern electronics. With its robust performance and reliability, this Power MOSFET is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,011 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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