ON Semiconductor EFC6604R-TR Power MOSFET
The EFC6604R-TR from ON Semiconductor is a high-performance, N-Channel Power MOSFET designed to deliver efficient power management and conversion within electronic systems. This component is particularly suitable for applications that demand low on-resistance, high switching speeds, and minimal power losses. The EFC6604R-TR is commonly utilized in power supplies, DC-DC converters, motor drives, and other power-intensive applications across various industries.
Key Features
- Low On-Resistance: The device features very low RDS(on), which reduces conduction losses and enhances overall efficiency, making it ideal for high-performance power applications.
- High Switching Speed: Fast switching capabilities enable the EFC6604R-TR to operate efficiently at high frequencies, which is critical for reducing switching losses and improving power density.
- Enhanced Thermal Performance: With an excellent thermal design, this MOSFET can dissipate heat effectively, ensuring reliable operation even under high current conditions.
- Robust Package: The device comes in a compact, surface-mount package that is both durable and space-efficient, making it suitable for modern, high-density circuit designs.
Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDSS) |
30V |
| Continuous Drain Current (ID) |
14A |
| Power Dissipation (PD) |
2.5W |
| Operating Temperature Range |
-55°C to +150°C |
| RDS(on) |
8.5 mΩ |
The EFC6604R-TR is a testament to ON Semiconductor's commitment to providing advanced semiconductor solutions that meet the evolving needs of modern electronics. With its robust performance and reliability, this Power MOSFET is an excellent choice for designers looking to optimize their power management systems.