ON Semiconductor CPH5812-TL-E MOSFET

The CPH5812-TL-E from ON Semiconductor is a high-performance, P-Channel MOSFET designed to offer efficient power management and conversion in a compact package. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions for a wide range of applications, including load switch, power management, and various other switching applications.

Key Features

• Device Type: P-Channel MOSFET
• Drain-Source Voltage (V<sub>DS): -20 V
• Continuous Drain Current (I<sub>D): -6 A
• Power Dissipation (P<sub>D): 1.5 W
• Gate-Source Voltage (V<sub>GS): ±8 V
• Static Drain-Source On-Resistance (R<sub>DS(on)): 29 mΩ
• Package: CPH (SuperSOT-6)
• Halogen-Free: Yes
• RoHS Compliant: Yes

Performance Benefits

The CPH5812-TL-E MOSFET is engineered to deliver high-speed switching performance with low on-resistance, ensuring minimal power loss and heat generation. This results in improved energy efficiency and reliability for end products, making it an ideal choice for portable and space-constrained applications.

Applications

ON Semiconductor's CPH5812-TL-E is versatile and can be used in various applications, including but not limited to:

• DC/DC Converters
• Power Management Circuits
• Battery Powered Devices
• Load Switching
• Portable Electronic Devices

Environmental & Regulatory Compliance

The device is compliant with RoHS (Restriction of Hazardous Substances) regulations, ensuring that it is free from specific hazardous materials found in electrical and electronic products. Additionally, it is a halogen-free product, further emphasizing ON Semiconductor's dedication to environmental sustainability.

Conclusion

With its robust design, efficient power handling, and compliance with environmental standards, the CPH5812-TL-E P-Channel MOSFET from ON Semiconductor is an excellent choice for designers looking to enhance the performance and efficiency of their power-sensitive applications.