Product Overview: CPH3338-G-TL-E from ON Semiconductor
The CPH3338-G-TL-E is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a reputable leader in the electronic components industry. This product is designed to meet the rigorous demands of modern electronic circuits, offering exceptional power efficiency, reliability, and thermal performance.
Key Features
- Low On-Resistance: The MOSFET is engineered with a low on-resistance, which significantly reduces conduction losses and enhances overall efficiency, making it ideal for power management applications.
- High-Speed Switching: It is capable of high-speed switching, which is essential for reducing switching losses and improving the performance of power supply circuits.
- Compact Design: Housed in a compact CPH package, the CPH3338-G-TL-E is optimized for space-constrained applications while still delivering robust power handling capabilities.
- Lead-Free and RoHS Compliant: The device adheres to environmental standards, being lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in eco-friendly products.
Applications
The CPH3338-G-TL-E is versatile and can be used in a wide range of applications, including:
- DC/DC converters
- Power management for portable devices
- Load switches
- Battery protection circuits
- Motor control circuits
Technical Specifications
With a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 13A, the CPH3338-G-TL-E is able to handle substantial power. Its gate threshold voltage (Vgs th) is rated at 1.5V, which allows for low-voltage operation. The device also features a total power dissipation (Pd) of 1.25W, ensuring it can manage thermal conditions efficiently during operation.
Quality and Support
ON Semiconductor is known for its commitment to quality and the CPH3338-G-TL-E is no exception. Customers can expect reliable performance backed by comprehensive technical support and resources from ON Semiconductor's extensive network.