The BAS40P2T5G from ON Semiconductor is a high-performance Schottky barrier diode designed for applications requiring fast switching and low forward voltage drop. This diode is housed in a compact SOT-23 package, making it suitable for high-density circuit board designs.

Key Features

• Low Forward Voltage Drop: The BAS40P2T5G provides a low forward voltage drop, which enhances system efficiency by reducing power loss during operation.
• Fast Switching Speed: With its fast switching capability, this diode is ideal for high-frequency applications, contributing to improved performance and reduced switching losses.
• Surface Mount Package: The small SOT-23 package is designed for automated assembly processes, and its compact size is perfect for space-constrained applications.
• High Current Capability: This diode can handle continuous forward current, making it suitable for a variety of high-current applications.
• Low Reverse Leakage: The BAS40P2T5G exhibits low reverse leakage current, which is crucial for maintaining efficiency and preventing battery drain in portable devices.

Applications

The BAS40P2T5G is versatile and can be used in a wide range of applications, including:

• DC-DC converters
• Power management devices
• High-frequency rectification
• Switching power supplies
• Reverse polarity protection

Specifications

Parameter Value Package SOT-23 Forward Continuous Current (IF) 200mA Peak Repetitive Reverse Voltage (VRRM) 40V Forward Voltage Drop (VF) @ IF 0.8V @ 100mA Reverse Leakage Current (IR) 2µA @ 25V

With its robust design and reliable performance, the ON Semiconductor BAS40P2T5G Schottky barrier diode is an excellent choice for designers looking for a high-quality, efficient solution for their circuit designs.