ON Semiconductor 2N6036 Power Transistor

The 2N6036 is a versatile and robust power transistor designed by ON Semiconductor, renowned for its high-quality electronic components. This bipolar junction transistor (BJT) is specifically crafted for general-purpose amplifier and switching applications where medium power handling and performance are required.

Key Features

• Type: PNP
• Package: TO-3
• Collector-Emitter Voltage (VCEO): 80V
• Collector Base Voltage (VCBO): 80V
• Emitter Base Voltage (VEBO): 5V
• Collector Current (IC): 4A
• Total Power Dissipation (Ptot): 40W
• DC Current Gain (hFE): 7500 to 20000

The 2N6036 is housed in a TO-3 package, known for its ability to handle higher power levels and provide excellent thermal performance. With a collector-emitter voltage rating of 80V, this transistor can efficiently manage moderate voltage applications. Furthermore, it offers a collector current of up to 4A, making it suitable for a variety of power amplification tasks.

One of the notable attributes of the 2N6036 is its high current gain, with a DC current gain (hFE) ranging from 7500 to 20000. This high gain factor allows for a significant level of amplification, making it ideal for audio amplifiers, power regulators, and other applications where signal amplification is necessary.

The device also boasts a total power dissipation of 40W, ensuring that it can handle a considerable amount of power without compromising its performance or longevity. This power capacity, combined with its robust construction, makes the 2N6036 a reliable choice for demanding environments.

ON Semiconductor's commitment to quality ensures that the 2N6036 transistor is a reliable component for designers and engineers looking to create efficient and durable electronic systems. Whether used in industrial controls, power supplies, or audio amplifiers, the 2N6036 stands out as a solid choice for applications requiring a PNP power transistor with medium power capabilities.