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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 4A
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) @ Ib, Ic 1.4V @ 1A, 4A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 1.5A, 2V
Power - Max 40W
Frequency - Transition 2MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-225AA, TO-126-3
Manufacturer Package TO-225AA
Win Source Part Number 762250-2N5190G
Family Name 2N5190
Introduction Date July 29, 1999
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2023
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5190G CAD Model

Description

The 2N5190G is a versatile NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is well-suited for a variety of applications, including amplification and switching functions in industrial, commercial, and consumer electronics. Its robust design ensures reliable operation even in demanding conditions.

Key Features

  • High Current Capacity: The 2N5190G can handle continuous collector currents up to 4 A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (VCEO) of 80 V, it can be used in circuits with relatively high operating voltages.
  • Power Dissipation: This transistor has a power dissipation rating of 40 W, ensuring it can manage significant energy without overheating.
  • Gain Bandwidth Product (fT): With an fT of 3 MHz, the 2N5190G provides decent frequency response for audio and other signal-processing applications.
  • TO-220 Package: Encased in a TO-220 package, it is easy to mount and provides excellent thermal performance.

Applications

The 2N5190G is suitable for a wide range of applications, including:

  • Audio amplifiers and high-fidelity audio outputs
  • Driver stages in hi-fi amplifiers and television circuits
  • Power regulators and power supply circuits
  • Switching applications and relay drivers

Reliability and Quality

ON Semiconductor is committed to providing high-quality products. The 2N5190G is designed to meet stringent reliability standards, ensuring a long operational lifespan and consistency in performance. It is also provided in a Pb-free package, making it compliant with RoHS directives for environmental responsibility.

Technical Specifications

Parameter Value Collector-Emitter Voltage (VCEO) 80 V Collector Current (IC) 4 A Power Dissipation (Pd) 40 W DC Current Gain (hFE) 30 - 240 Gain Bandwidth Product (fT) 3 MHz

The 2N5190G from ON Semiconductor is an excellent choice for designers and engineers looking for a reliable NPN transistor that combines high power handling with a compact form factor and versatile application potential.

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