The 2N3442 is a high-power NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This robust transistor is designed for general-purpose amplifier and switching applications, and it is well-suited for a wide range of high-power and high-voltage scenarios.

Key Features

• Voltage and Current Ratings: With a collector-emitter voltage (VCEO) of 140V and a collector current (IC) rating of up to 10A, the 2N3442 is capable of handling significant power levels, making it ideal for a variety of demanding applications.
• Power Dissipation: The device can dissipate up to 117W of power, allowing it to manage high power density applications efficiently.
• High Gain Bandwidth Product: It offers a transition frequency (fT) of 4MHz, providing a good balance of speed and power for audio amplifiers, power regulators, and driver stages in high-fidelity amplifiers.
• Robust Package: Encased in a TO-3 package, the 2N3442 ensures reliable operation even under harsh conditions, thanks to its durable metal casing and superior thermal performance.

Applications

The 2N3442 transistor is versatile and can be used in a variety of applications, including:

• Linear and switching industrial equipment
• Power amplifiers
• Audio amplifiers
• Regulated power supplies
• High-fidelity amplifiers

Quality and Reliability

ON Semiconductor is committed to providing high-quality products, and the 2N3442 is no exception. It is designed to meet or exceed the stringent requirements of the industrial and consumer markets. With ON Semiconductor's reputation for reliability, you can trust the 2N3442 to perform consistently across a range of conditions.

Environmental Compliance

In line with ON Semiconductor's dedication to environmental sustainability, the 2N3442 is produced with eco-friendly materials and processes, ensuring compliance with international environmental regulations.