The MSM56V16160F-10TSK-7 is a high-speed synchronous DRAM (SDRAM) manufactured by OKI/Metcal. It is designed for applications requiring high bandwidth and low latency data access. This SDRAM chip is typically used in graphics cards, high-performance computing systems, and embedded systems where fast memory access is critical.

Applications

• Graphics cards
• High-performance computing systems
• Embedded systems
• Networking equipment
• Industrial control systems

Features

• High-speed synchronous operation
• 16Mb memory density
• Organized as 4 banks x 256K x 16 bits
• Single 3.3V power supply
• LVTTL compatible inputs and outputs
• Self Refresh Mode
• Clock cycle time of 10ns

Benefits

• High bandwidth for fast data transfer
• Low latency for quick response times
• Suitable for demanding applications
• Easy integration with standard memory controllers
• Reduced power consumption with self-refresh mode
• Reliable performance due to mature SDRAM technology

Technical Specifications

The MSM56V16160F-10TSK-7 operates at a clock frequency of up to 100 MHz, providing a data transfer rate suitable for high-performance applications. It is packaged in a TSOP (Thin Small Outline Package), which allows for efficient board space utilization. The device supports burst read and write operations, which further enhance its data throughput. It requires a single 3.3V power supply and is compatible with LVTTL (Low Voltage Transistor-Transistor Logic) signal levels. The self-refresh mode reduces power consumption during idle periods, making it suitable for power-sensitive applications.

The SDRAM's architecture includes multiple internal banks that enable concurrent memory accesses, increasing overall system performance. The integrated DLL (Delay-Locked Loop) ensures precise timing and synchronization, crucial for stable and reliable operation at high clock frequencies. The device also incorporates various test and diagnostic features to ensure its quality and reliability. Overall, the MSM56V16160F-10TSK-7 offers a compelling combination of speed, density, and power efficiency, making it a versatile memory solution for a wide range of applications. The -10 denotes a 10ns access time.