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MBC13917EPR2

Part No MBC13917EPR2
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description RF AMP SIGE 100MHZ-2.5GHZ 6MLPD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories RF/IF and RFID
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Frequency 100MHz to 2.5GHz
P1dB -1.1dB
Gain 14.9dB
Noise Figure 1.8dB
RF Type General Purpose
Supply Voltage - Operating 2.1 V to 3.3 V
Operating Supply Current 20mA
Test Frequency 1.9GHz
Case / Package 6-MLPD EP (1.5x2)
Win Source Part Number 1072366-MBC13917EPR2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MBC13917EPR2 CAD Model

Description

Introducing the MBC13917EPR2 from NXP Semiconductors

The MBC13917EPR2 is a state-of-the-art silicon germanium carbon (SiGe:C) low-noise amplifier (LNA) designed and manufactured by the renowned NXP Semiconductors. This high-performance component is engineered to deliver exceptional signal amplification with minimal noise, making it an ideal solution for a wide range of applications that require reliable and clear signal processing.

The device operates within a frequency range of 100 MHz to 2.5 GHz, providing versatile use across various communication standards, including GSM, CDMA, and WCDMA. It is particularly well-suited for use in wireless systems where low noise figures are crucial for maintaining signal integrity and quality.

One of the standout features of the MBC13917EPR2 is its excellent noise figure of 1.6 dB typical at 900 MHz, which ensures that signal quality is preserved even under challenging conditions. This is complemented by a high gain of 17 dB typical at 900 MHz, which allows for robust signal amplification without significant distortion.

The device is housed in a compact, lead-free 2 x 2 mm 8-pin QFN package, which not only saves valuable board space but also supports environmentally friendly manufacturing processes. The MBC13917EPR2 also boasts a robust design that ensures reliability and performance stability over a wide temperature range from -40°C to +85°C.

Installation and integration are made simple with the device's single 2.7 V to 5.5 V supply voltage, which accommodates a variety of design requirements and simplifies power management. Additionally, the MBC13917EPR2 includes an integrated active bias circuit, which maintains consistent performance and reduces the need for external components.

Whether you're designing RF front-ends for mobile phones, GPS receivers, or wireless LAN applications, the MBC13917EPR2 from NXP Semiconductors offers the performance, reliability, and ease of use that engineers and designers need to create top-tier products. Invest in the MBC13917EPR2 for your next project and experience the difference that quality amplification can make.

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