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BZB784-C10

Part No BZB784-C10
Manufacturer NXP / Nexperia
Catalog Diodes - Zener - Arrays
Description DIODE ZENER ARRAY 10V SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Configuration 1 Pair Common Anode
Voltage - Zener (Nom) (Vz) 10V
Tolerance ±5%
Maximum Power Dissipation 180mW
Impedance (Max) (Zzt) 20 Ohm
Current - Reverse Leakage @ Vr 200nA @ 7V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 201748-BZB784-C10
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BZB784-C10 CAD Model

Description

Product Overview: BZB784-C10 - NXP

The BZB784-C10 is a state-of-the-art silicon-based bipolar junction transistor (BJT) developed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. Designed to provide reliable and efficient performance, the BZB784-C10 is an integral component for a wide range of electronic applications.

Key Features

  • High Frequency Performance: This transistor is optimized for high-speed switching, making it suitable for RF and microwave applications.
  • Low Noise Figure: With its low noise characteristics, the BZB784-C10 is ideal for signal amplification in sensitive audio and communication systems.
  • High Power Gain: It offers a high power gain, which is essential for amplifiers requiring strong signal enhancement.
  • Robust Design: The device is built to withstand tough conditions, ensuring a reliable performance even under strenuous operating circumstances.

Applications

The versatility of the BZB784-C10 makes it suitable for a variety of applications, including but not limited to:

  • RF amplifiers and oscillators
  • Microwave communication systems
  • Audio amplification circuits
  • Signal processing equipment
  • Industrial and medical electronics

Technical Specifications

Parameter Specification
Package SOT223
Transition Frequency (fT) 10 GHz
Noise Figure (NF) 1 dB (typical)
Collector-Emitter Voltage (Vceo) 12 V
Collector Current (Ic) 50 mA

With its robust construction and superior electrical characteristics, the NXP BZB784-C10 transistor is an excellent choice for designers looking to enhance the performance and reliability of their high-frequency electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,410+ $0.0355 $50.0550
3,425+ $0.0292 $100.0100
5,305+ $0.0283 $150.1315
7,300+ $0.0274 $200.0200
9,470+ $0.0264 $250.0080
12,660+ $0.0237 $300.0420
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 1,750 pieces
MOQ: 1410 pcs
Order Increment : 1 pcs
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