The BUK482-200A is a high-performance, N-channel PowerMOS transistor designed and manufactured by NXP Semiconductors. This robust transistor is tailored for a variety of applications, ranging from automotive to industrial and power management systems. Its cutting-edge technology ensures efficient power conversion and reliable operation in demanding environments.
Key Features
- Low On-state Resistance (RDS(on)): The BUK482-200A boasts an exceptionally low on-state resistance, which translates to reduced conduction losses and enhances overall efficiency in high-current applications.
- High Current Capability: With its ability to handle continuous currents up to 200A, this power MOSFET is well-suited for heavy-duty operations, making it an ideal choice for power-intensive tasks.
- High-speed Switching: The device is engineered for fast switching performance, which is crucial for reducing switching losses and improving the power efficiency in converters and inverters.
- Robust Thermal Performance: The BUK482-200A is encapsulated in a TO-220 package, known for its excellent thermal characteristics. This ensures stable performance even at high temperatures.
- Improved Avalanche Energy Rating: The transistor is designed to withstand high energy pulses in the avalanche and commutation modes, providing reliable protection against unexpected voltage transients.
Applications
The versatility of the BUK482-200A allows it to be used in a wide array of applications, including but not limited to:
- DC/DC converters and DC/AC inverters
- Motor drives and controllers
- Automotive applications such as engine control units and power distribution systems
- Switch mode power supplies (SMPS)
- Power management circuits
Quality and Reliability
NXP Semiconductors is committed to delivering high-quality and reliable components. The BUK482-200A is no exception, as it undergoes rigorous testing and quality assurance processes to meet the stringent requirements of the industry. Users can trust this power MOSFET to provide consistent performance and durability for their critical applications.